folder Физико-математические науки

Документы

default OPTICAL PROPERTIES OF CoSi2/Si STRUCRURE

Владелец Число скачиваний: 63

Isaev Makhmudxodja Sharipovich, Usmonov Muratkasim

Tashkent state technical university

(Tashkent, Uzbekistan)

Abstract. Formation treatment silicide cobalt film on the silicon surface. Optical properties were studied with IR-spectrometer in 1-4 wavelength range. Dependence of refraction factor from thick silicide film had studied. Also had measured optical transmission factor for different thickness silicide films.

Keywords: structure, silicide film, IR-spectrometer, refraction factor, optical transmission.

default PLATINUM SILICIDE FILM FORMATION ON SILICON SURFACE

Владелец Число скачиваний: 62

Djuraev Untir

Tashkent state technical university

(Tashkent, Uzbekistan)

Abstract. Formation treatment silicide platinum on the surface monocrystallic silicon surface. Shown, that silicide form, size and surface concentration dependence from structure and composition stating phases ―platinum- silicon‖ and from sample temperature in diffusion doped time. Supposed silicide film formation on silicon surface as nanotube.

Keywords: silicide, specific resistance, homogeneity, modulation, scanning, photoemf, nanotube.

default TEMPERATURE DEPENDENCE OF SPECIFIC RESISTANCE OF COSI2–SI STRUCTURE

Владелец Число скачиваний: 63

Makhmudxodja Isaev, Utkir Djuraev

Tashkent state technical university

(Tashkent, Uzbekistan)

Abstract: Currently, the actual problem is the study of physical processes occurring in the bulk and on the surface and in the surface layers of single-crystal semiconductor, in particular silicon during diffusion doping, produce deep levels. First of all, the need for these studies due to the fact that during the diffusion doping semiconductors material silicon is possible materials compensated with given electro physical, photo electric and optical properties. In a previous work performed on the study of doped samples, the focus is mainly focused on a bulk part of the crystal obtained by removing the surface region, since it is considered as if the caller is not disturbed and practical intereset. However, for in depth study of the process of diffusion of elements needed to deal with such important issues as the physics education at the highly doped surface area, the nature of the formation of metal silicides, which are quite different from metals and semiconductors, as well as occurring in the near surface physical and chemical processes ( mutual diffusion, the solid-phase reaction, and others ) Silicides of transition elements are formed on the surface of the silicon can be used to create a barrier schottky and ohmic contacts in integrated circuit technology, that perform the function of gates and interconnects. In this regard, if we consider the formation of silicide by a metallurgical interaction between the metal and silicon captive, then the subsequent high- temperature heat treatment, promotes diffusion alloyed silicon, leading to the formation of the profile of the carrier density it requires a comprehensive research of the mechanism of admixture in volume of the crystal and their interactions with the matrix ( core ) atoms of the crystal and with technological impurities and structural defects. In this study of silicide in the surface region in the process of diffusion doping of silicon it self is relevant, and the formation of the concentration profile of the carries in surface region opens new ways to create semiconductors device.

Keywords: structure, doping, barrier, silicide, specific resistance, vacuum.

default АЙМАҚТАРДЫҢ ГИДРОЭНЕРГЕТИКАЛЫҚ ӘЛЕУЕТІН ПАЙДАЛАНУ

Владелец Число скачиваний: 64

Актаев Еркин Куанышбекович, Сайлауова Гулшат Балкашкызы

Таразский инновационно-гуманитарный университет

(Тараз, Казахстан)

Аннотация. Одним из основных факторов, определяющих эффективность использования источника гидроэлектроэнергии, является локальный энергетический потенциал потока воды. При выборе рационального места размещения микро ГЭС приходится решать комплексную задачу, связанную с определением количества энергии, которое возможно получить при использовании данного водотока и его достаточность для удовлетворения нужд потребителей.

Ключевые слова. Напор, высота падения, объемный расход, скорость, размеры напорного трубопровода, гидрогенератор.

default ОҚУШЫЛАРДЫҢ ФУНКЦИОНАЛДЫҚ САУАТТЫЛЫҒЫН ДАМЫТУ - ӚМІР ТАЛАБЫ

Владелец Число скачиваний: 62

Ахметкалиева Қарлығаш Кенесбековна,

Мухамеджанова Сания Каликайдаровна

Ӛскемен қаласы әкімдігінің «No6 орта мектеп» КММ

(Ӛскемен, Қазақстан)

Аннотация. Оқушыларға функционалдық сауаттылығын арттыру – білім беру процесінің негізі болып табылады. Функционалдық сауаттылық деп құзыретті және тиімді іс-әрекетті айтады. Оған адамның қызығушылығын жүзеге асыру және адамның қоғаммен және қоршаған ортамен өзара қарым- қатынасы байланысты болады. Кілт сөздер: функционалдық сауаттылық, экономика, технология, шығармашылық, іскерлік,зерттеу.